LEVEL 1 - 37 PATENTS 1. 5,660,806, Aug. 26, 1997, Process for removing lead from sandblasting wastes containing paint chips, Fristad, William E., Santa Rosa, California Virnig, Michael J., Tucson, Arizona Elliott, Dana K., Santa Rosa, California, Henkel Corporation, Plymouth Meeting, Pennsylvania (02) 2. 5,563,285, Oct. 8, 1996, Production of silicon-phosphorus containing compositions, Blount, David H., 6728 Del Cerro Blvd., San Diego, California 92120 3. 5,505,925, Apr. 9, 1996, Process for removing heavy metals from soil, Fristad, William E., Santa Rosa, California, Cognis, Inc., Santa Rose, California (02) 4. 5,494,649, Feb. 27, 1996, Process for removing heavy metals from paint chips, Fristad, William E., Santa Rosa, California Virnig, Michael J., Santa Rosa, California Cassel, Jonathan M., Half Moon Ray, California Elliot, Dana K., Santa Rosa, California, Cognis, Inc., Santa Rosa, California (02) 5. 5,466,367, Nov. 14, 1995, Industrial waste water treatment, Coate, Robert B., Waco, Texas Towles, John T., Bruceville, Texas, Environmental Restoration Services, Inc., Waco, Texas (02), Date Transaction Recorded: Dec. 07, 1995 ASSIGNMENT OF ASSIGNOR'S INTEREST (SEE DOCUMENT FOR DETAILS). TOWLES, JOHN T. 208 OTIS DRIVE WACO, TEXAS 76710 Reel & Frame Number: 7732/0387 6. 5,401,392, Mar. 28, 1995, Process for eliminating mercury and possibly arsenic in hydrocarbons, Courty, Philippe, Houilles, France Dufresne, Pierre, Rueil Malmaison, France Boitiaux, Jean P., Poissy, France Martino, Germain, Poissy, France, Institut Francais du Petrole, Rueil Malmaison, France (03) 7. 5,322,628, Jun. 21, 1994, Method for simultaneously drying and removing metallic and organic mercury from fluids, Yan, Tsoung Y., Philadelphia, Pennsylvania, Mobil Oil Corporation, Fairfax, Virginia (02) 8. 5,318,666, Jun. 7, 1994, Method for via formation and type conversion in group II and group VI materials, Elkind, Jerome L., Dallas, Texas Orloff, Glennis J., Plano, Texas Smith, Patricia B., Grapevine, Texas, Texas Instruments Incorporated, Dallas, Texas (02) 9. 5,304,820, Apr. 19, 1994, Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same, Tokunaga, Hiroyuki, Kawasaki, Japan Yamagata, Kenji, Atsugi, Japan Yonehara, Takao, Atsugi, Japan, Canon Kabushiki Kaisha, Tokyo, Japan (03) 10. 5,304,693, Apr. 19, 1994, Process for eliminating mercury from steam cracking installations, Boitiaux, Jean-Paul, Poissy, France Sarrazin, Patrick, Rueil Malmaison, France, Institut Francais du Petrole, Rueil Malmaison, France (03) 11. 5,269,943, Dec. 14, 1993, Method for treatment of soils contaminated with organic pollutants, Wickramanayake, Godage B., Cranbury, New Jersey, Battelle Memorial Institute, Richland, Washington (02) 12. 5,212,113, May 18, 1993, Process for the selective epitaxy and etching of a III-V material in the same OMCVD growth frame, Azoulay, Rosette, Fontenay aux Rose, France Dugrand, Louis, Chelles, France, France Telecom Etablissement Autonome de Droit Public (Centre National d'Etudes des Telecommunications), Issy les Moulineaux, France (07) 13. 5,205,927, Apr. 27, 1993, Apparatus for treatment of soils contaminated with organic pollutants, Wickramanayake, Godage B., Columbus, Ohio, Battelle Memorial Institute, Columbus, Ohio (02) 14. 5,202,283, Apr. 13, 1993, Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species, Younger, Charles R., Anaheim Hills Hess, Kenneth L., Yorba Linda Irvine, Stuart J. C., Moorpark Gertner, Edward R., Moorpark Johnston, Shawn L., Moorpark, California, Rockwell International Corporation, Seal Beach, California (02) 15. 5,123,995, Jun. 23, 1992, Low-temperature, photo-induced epitaxy, Stinespring, Charter D., Arthurdale, West Virginia Freedman, Andrew, Chelmsford, Massachusetts, Aerodyne Research, Inc., Billerica, Massachusetts (02) 16. 5,080,971, Jan. 14, 1992, Magnetic recording medium, Yokoyama, Kenji, Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan, TDK Corporation, Tokyo, Japan (03) 17. 5,069,967, Dec. 3, 1991, Magnetic recording medium, Yokoyama, Kenji, Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan, TDK Corporation, Tokyo, Japan (03) 18. 5,034,483, Jul. 23, 1991, Process for preparing high density, broad molecular weight distribution alpha-olefin polymers, Miro, Nemesio D., North Brunswick, New Jersey Nowlin, Thomas E., Somerset, New Jersey, Mobil Oil Corporation, Fairfax, Virginia (02) 19. 5,024,927, Jun. 18, 1991, Information recording medium, Yamada, Katsuyuki, Yokohama, Japan Ide, Yukio, Mishima, Japan Harigaya, Makoto, Hiratsuka, Japan Iwasaki, Hiroko, Tokyo, Japan, Ricoh Company, Ltd., Tokyo, Japan (03) 20. 5,010,033, Apr. 23, 1991, Process for producing compound semiconductor using an amorphous nucleation site, Tokunaga, Hiroyuki, Kawasaki, Japan Yamagata, Kenji, Atsugi, Japan Yonehara, Takao, Atsugi, Japan, Canon Kabushiki Kaisha, Tokyo, Japan (03) 21. 4,950,621, Aug. 21, 1990, Method of growing crystalline layers by vapor phase epitaxy, Irvine, Stuart J., Malvern, England Mullin, John B., West Malvern, England Giess, Jean, Malvern, England, Secretary of the State for Defence in Her Majesty's Government of the United Kingdom of Great Britain and Northern Ireland, United Kingdom (07) 22. 4,919,304, Apr. 24, 1990, Bubbler cylinder device, Markowicz, Marion, Basking Ridge, New Jersey, American Cyanamid Company, Stamford, Connecticut (02) 23. 4,889,767, Dec. 26, 1989, Magnetic recording medium, Yokoyama, Kenji, Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan, TDK Corporation, Tokyo, Japan (03) 24. 4,880,687, Nov. 14, 1989, Magnetic recording medium, Yokoyama, Kenji, Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan, TDK Corporation, Tokyo, Japan (03), Date Transaction Recorded: Apr. 15, 1993 ASSIGNMENT OF ASSIGNOR'S INTEREST (SEE DOCUMENT FOR DETAILS). GENERAL ELECTRIC COMPANY ONE RIVER ROAD, SCHENECTADY, NY 12345 Reel & Frame Number: 6527/0398 25. 4,866,021, Sep. 12, 1989, Catalyst composition for preparing high density, broad molecular weight distribution alpha-olefin polymers, Miro, Nemesio D., North Brunswick, New Jersey Nowlin, Thomas E., Somerset, New Jersey, Mobil Oil Corp., New York, New York (02) 26. 4,859,625, Aug. 22, 1989, Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy, Matsumoto, Fumio, Miyagi, Japan, Research Development Corporation of Japan, Junichi Nishizawa and Oki Electric Industry Co., Ltd., Japan (03) 27. 4,844,736, Jul. 4, 1989, Method for the preparation of finely divided metal particles, Shimo, Nobuo, Ichihara, Japan Yoshihara, Keitaro, Okazaki, Japan Nakashima, Nobuaki, Suita, Japan, Idemitsu Kosan Co., Ltd., Tokyo, Japan (03) 28. 4,826,602, May 2, 1989, Reduction of trace elements to the elemental form by microorganisms, Revis, Nathaniel W., Oak Ridge, Tennessee Benson, Suzanne B., Kingston, Tennessee Osborne, Tanya R., Oak Ridge, Tennessee, Oak Ridge Research Institute, Oak Ridge, Tennessee (02) 29. 4,767,494, Aug. 30, 1988, Preparation process of compound semiconductor, Kobayashi, Naoki, Iruma, Japan Makimoto, Toshiki, Tokorozawa, Japan Horikoshi, Yoshiji, Akishima, Japan, Nippon Telegraph & Telephone Corporation, Tokyo, Japan (03) 30. 4,762,576, Aug. 9, 1988, Close space epitaxy process, Wilson, Herbert L., Woodbridge, Virginia Guiterrez, William A., Woodbridge, Virginia, The United States of America as represented by the Secretary of the Army, Washington, District of Columbia (06) 31. 4,728,427, Mar. 1, 1988, Reduction of trace elements to the elemental form by microorganisms, Revis, Nathaniel W., 1060 W. Outer Dr., Oak Ridge, Tennessee 37830 Benson, Suzanne B., 73 Paint Rock Ferry Rd., Apt. 12, Kingston, Tennessee 37763 Osborne, Tanya R., 108 Lynwood La., Oak Ridge, Tennessee 37830 Hadden, Charles T., 165 Waddell Cir., Oak Ridge, Tennessee 37830 32. 3,933,431, Jan. 20, 1976, Method and apparatus for sampling atmospheric mercury, Trujillo, Patricio E., Santa Fe, New Mexico Campbell, Evan E., Los Alamos, New Mexico Eutsler, Bernard C., Los Alamos, New Mexico, The United States of America as represented by the United States Energy Research and Development Administration, Washington, District of Columbia (06) 33. 3,923,597, Dec. 2, 1975, Mercury concentration by the use of microorganisms, Chakrabarty, Ananda M., Latham, New York Friello, Denise A., Schenectady, New York Mylroie, Joan R., Scotia, New York, General Electric Company, Schenectady, New York (02) 34. 3,802,910, Apr. 9, 1974, RECOVERY OF MERCURY FROM MERCUROUS BEARING LIQUIDS, Gerow, Raymond F., Berkeley Hts., New Jersey Soule, Stanley B., Springfield, New Jersey, GAF Corporation, New York, New York (02), Date Transaction Recorded: Jun. 14, 1989 SECURITY INTEREST CHASE MANHATTAN BANK (NATIONAL ASSOCIATION) THE, AS COLLATERAL AGENT Reel & Frame Number: 5122/0370 Date Transaction Recorded: Oct. 30, 1989 CHANGE OF NAME - ADDITIONAL PROPERTIES MAY SUBSEQUENTLY BE INDEXED AGAINST THE ORIGINAL DOCUMENT. THE PAPER REQUESTING SUCH INDEXING MUST ADEQUATELY IDENTIFY ALL SUCH PROPERTIES AND MUST INDICATE THE REEL AND FRAME NUMBER ON WHICH THE ORIGINAL DOCUMENT IS RECORDED. EFFECTIVE ON 04/11/1989 GAF CHEMICALS CORPORATION A CORP. OF DE Reel & Frame Number: 5251/0071 Date Transaction Recorded: Oct. 30, 1990 CHANGE OF NAME - ADDITIONAL PROPERTIES MAY SUBSEQUENTLY BE INDEXED AGAINST THE ORIGINAL DOCUMENT. THE PAPER REQUESTING SUCH INDEXING MUST ADEQUATELY IDENTIFY ALL SUCH PROPERTIES AND MUST INDICATE THE REEL AND FRAME NUMBER ON WHICH THE ORIGINAL DOCUMENT IS RECORDED. EFFECTIVE APRIL 10, 1989 DORSET INC., A DE CORP. Reel & Frame Number: 5250/0940 Date Transaction Recorded: Dec. 03, 1990 SECURITY INTEREST CHASE MANHATTAN BANK (NATIONAL ASSOCIATION), THE Reel & Frame Number: 5604/0020 Date Transaction Recorded: Jun. 17, 1991 ASSIGNMENT OF ASSIGNORS INTEREST ISP 3 CORP A CORP OF DELAWARE Reel & Frame Number: 5949/0001 Date Transaction Recorded: Jun. 17, 1991 CHANGE OF NAME - ADDITIONAL PROPERTIES MAY SUBSEQUENTLY BE INDEXED AGAINST THE ORIGINAL DOCUMENT. THE PAPER REQUESTING SUCH INDEXING MUST ADEQUATELY IDENTIFY ALL SUCH PROPERTIES AND MUST INDICATE THE REEL AND FRAME NUMBER ON WHICH THE ORIGINAL DOCUMENT IS RECORDED. EFFECTIVE ON 06/06/1991 ISP INVESTMENTS INC. A CORP OF DELAWARE Reel & Frame Number: 5949/0051 Date Transaction Recorded: Aug. 13, 1992 RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). GAF CHEMICALS CORPORATION SUTTON LABORATORIES, INC. GAF BUILDING MATERIALS CORPORATION Reel & Frame Number: 6243/0208 35. 3,790,370, Feb. 5, 1974, REMOVAL AND RECOVERY OF METALS FROM POLLUTED WATERS Lalancette, Jean-Marc, Sherbrooke, Quebec, Canada, Universite de Sherbrooke, Sherbrooke, Quebec, Canada (03) 36. 3,762,938, Oct. 2, 1973, DEPOSITION OF THIN METAL FILMS, Ridenour, Richard E., Midland, Michigan Groves, Kenneth O., Midland, Michigan, The Dow Chemical Company, Midland, Michigan (02) 37. 3,697,535, Oct. 10, 1972, 4,5-DIHYDROIMIDAZOLINE-3-OXIDE-1-OXYL, Leute, Richard K., Mountain View, California Ullman, Edwin F., Atherton, California, Synvar Associates,, Palo Alto, California (02) LEVEL 1 - 1 OF 37 PATENTS 5,660,806 Aug. 26, 1997 Process for removing lead from sandblasting wastes containing paint chips INVENTOR: Fristad, William E., Santa Rosa, California Virnig, Michael J., Tucson, Arizona Elliott, Dana K., Santa Rosa, California SUM: ... reduction to mercury metal by bacterial action, including the highly insoluble mercuric sulfide. The conversion of elemental mercury into water soluble ionic forms is also biologically possible as well as conversion into volatile dimethyl mercury. All forms and compounds of mercury are toxic including elemental mercury. ["The Merck Index," 11Ed., Merck & Co., Inc., Rahway, N.J., 1989, p 5805; P. C. Bidstrup, "Toxicity of Mercury and its ... LEVEL 1 - 2 OF 37 PATENTS 5,563,285 Oct. 8, 1996 Production of silicon-phosphorus containing compositions INVENTOR: Blount, David H., 6728 Del Cerro Blvd., San Diego, California 92120 DETDESC: ... oxalate q) succinic anhydride r) fumaric acid s) caprolactom t) diethyl glycol u) lead acetate v) ammonium thiocyanate w) methyl magnesium chloride x) zinc y) dimethyl mercury z) mixtures of the above. EXAMPLE 18 About 5 parts by weight of silicon tetrachloride, 5 parts by weight of phosphorus trichloride, 30 parts by weight of propylene oxide and 30 ... LEVEL 1 - 3 OF 37 PATENTS 5,505,925 Apr. 9, 1996 Process for removing heavy metals from soil INVENTOR: Fristad, William E., Santa Rosa, California SUM: ... reduction to mercury metal by bacterial action, including the highly insoluble mercuric sulfide. The conversion of elemental mercury into water soluble ionic forms is also biologically possible as well as conversion into volatile dimethyl mercury. All forms and compounds of mercury are toxic including elemental mercury. ["The Merck Index," 11 Ed., Merck & Co., Inc., Rahway, N.J., 1989, p 5805; P. C. Bidstrup, "Toxicity of Mercury and its ... LEVEL 1 - 4 OF 37 PATENTS 5,494,649 Feb. 27, 1996 Process for removing heavy metals from paint chips INVENTOR: Fristad, William E., Santa Rosa, California Virnig, Michael J., Santa Rosa, California Cassel, Jonathan M., Half Moon Ray, California Elliot, Dana K., Santa Rosa, California SUM: ... reduction to mercury metal by bacterial action, including the highly insoluble mercuric sulfide. The conversion of elemental mercury into water soluble ionic forms is also biologically possible as well as conversion into volatile dimethyl mercury. All forms and compounds of mercury are toxic including elemental mercury. ["The Merck Index," 11 Ed., Merck & Co., Inc., Rahway, N.J., 1989, p 5805; P. C. Bidstrup, "Toxicity of Mercury and its ... LEVEL 1 - 5 OF 37 PATENTS 5,466,367 Nov. 14, 1995 Industrial waste water treatment INVENTOR: Coate, Robert B., Waco, Texas Towles, John T., Bruceville, Texas DETDESC: ... Each of these contaminates are removed to a level such that only 0.5% of the original concentration remains in the treated output. Although mercury as an element is only somewhat reduced by ozone treatment, aqueous solutions of dimethyl mercury are removed such that it can no longer be detected. The following compounds listed in Table I are also removed to a greater or lesser extent by ozone. However, all of the following compounds are substantially removed by either ... LEVEL 1 - 6 OF 37 PATENTS 5,401,392 Mar. 28, 1995 Process for eliminating mercury and possibly arsenic in hydrocarbons INVENTOR: Courty, Philippe, Houilles, France Dufresne, Pierre, Rueil Malmaison, France Boitiaux, Jean P., Poissy, France Martino, Germain, Poissy, France SUM: ... as the batches contain compounds other than elementary metals, for example, for arsenic, arsines comprising chains containing hydrocarbon containing two or more than two carbon atoms or else, for mercury, dimethyl mercury and other mercury compounds comprising chains containing hydrocarbon containing two or more than two carbon atoms, and optionally other nonmetal elements (sulfur, nitrogen . . . ). Further, other tests carried out by the ... LEVEL 1 - 7 OF 37 PATENTS 5,322,628 Jun. 21, 1994 Method for simultaneously drying and removing metallic and organic mercury from fluids INVENTOR: Yan, Tsoung Y., Philadelphia, Pennsylvania SUM: ... mercury are easy to remove using conventional methods, including silver. Organic mercury, on the other hand, is very difficult to remove using conventional methods. While both forms of mercury exist, organic forms such as dimethyl mercury, diethyl mercury and the like are more difficult to remove using conventional mercury removal techniques and are significantly present in the residual mercury of some natural gases. These difficult to remove organic mercury compounds are called refractory ... ... natural gas source, further complicating the removal process. The reactivities of various mercury compounds with metals such as gold, silver, copper and iron varies greatly. It has recently been discovered that organic mercury compounds such as dimethyl mercury react with gold quite readily. In contrast, however, organic forms of mercury react little if at all with silver. Thus, it is difficult using prior art methods to remove mercury to a low level from a fluid such as ... DETDESC: ... 350o C. for 1 hour and then cooled to 22o C. for adsorption tests. Through each of the separate packed tubes at 22o C., 100 cc/min of N2 containing 15 ppb of dimethyl mercury was passed. The dimethyl mercury in a refractory organic mercury compound. The mercury content of the effluent gas was measured using a Jerome 301 instrument. The results, shown graphically in FIG. 2, indicate the following results; Ag/4A is not effective for removing dimethyl mercury, but is effective at removing metallic mercury; Au/4A is extremely effective at removing dimethyl mercury, and over 95% of the organic mercury is removed before any significant leakage of mercury in the effluent is detected. Co-impregnation of silver and gold could lead to the formation of a single particle alloy and is less effective. Thus, the combination of ... LEVEL 1 - 8 OF 37 PATENTS 5,318,666 Jun. 7, 1994 Method for via formation and type conversion in group II and group VI materials INVENTOR: Elkind, Jerome L., Dallas, Texas Orloff, Glennis J., Plano, Texas Smith, Patricia B., Grapevine, Texas DETDESC: ... L),(3) where CH4 is a molecule of methane gas, CH3. is a methyl radical, Hg(L) is a lattice of mercury atoms in HgCdTe, and Hg(CH3)2 is the volatile reaction product, i.e., dimethyl mercury. In practice, both of these reactions occur simultaneously, along with a number of other reactions. It is important to maintain wafer structure 24 at a relatively constant and low temperature during the reactive etching process. ... LEVEL 1 - 9 OF 37 PATENTS 5,304,820 Apr. 19, 1994 Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same INVENTOR: Tokunaga, Hiroyuki, Kawasaki, Japan Yamagata, Kenji, Atsugi, Japan Yonehara, Takao, Atsugi, Japan DETDESC: ... included dimethyl zinc, diethyl zinc (Zn(C2H5)2), dimethyl cadmium (Cd(CH3)2), diethyl cadmium, dipropyl cadmium (Cd(C3H7)2), dibutyl cadmium (Cd(C4H9)2), dimethyl mercury (Hg(CH3)2), diethyl mercury (Hg(C2H5)2), etc., and as the starting material (VI) hydrogen sulfide (H2S), selenium hydride, dimethyl selenium, diethyl selenium (Se(C2H5)2), ... LEVEL 1 - 10 OF 37 PATENTS 5,304,693 Apr. 19, 1994 Process for eliminating mercury from steam cracking installations INVENTOR: Boitiaux, Jean-Paul, Poissy, France Sarrazin, Patrick, Rueil Malmaison, France SUM: ... masses incorporating copper at least partly in the sulphide form and a mineral support. These different masses are very effective for trapping the metallic mercury, but relatively ineffective when the metal is combined in the form of dimethyl mercury or mercury compounds having hydrocarbon chains containing two or more carbon atoms and optionally other non-metallic elements (sulphur, nitrogen, etc.). In order to ensure a complete elimination of the mercury in all ... LEVEL 1 - 11 OF 37 PATENTS 5,269,943 Dec. 14, 1993 Method for treatment of soils contaminated with organic pollutants INVENTOR: Wickramanayake, Godage B., Cranbury, New Jersey SUM: ... J., and Bader, H., 1983, Rate Constants of Reactions of Ozone with Organic and Inorganic Compounds in Water-I, Water Research, Vol. 17, pp. 173-183; reported that the addition of sodium bicarbonate and dimethyl mercury increased the stability of ozone at high pH. An increase in base (NaOH) concentration from 1 N to 20 N also results in the extension of the half-life of ozone by more than three orders of magnitude. However, such ... LEVEL 1 - 12 OF 37 PATENTS 5,212,113 May 18, 1993 Process for the selective epitaxy and etching of a III-V material in the same OMCVD growth frame INVENTOR: Azoulay, Rosette, Fontenay aux Rose, France Dugrand, Louis, Chelles, France SUM: ... antimony (TMS). The deposition of layers containing zinc, cadmium or mercury takes place by decomposition respectively of diethyl tin (DEZ), trimethyl zinc (TMZ) or dimethyl zinc (DMZ); dimethyl cadmium (DMC) and dimethyl mercury (DMHg). For the deposition of layers containing sulphur, selenium or tellurium, use is respectively made of vapors of hydrogen sulphide (H2S); hydrogen selenide (H2Se) or dimethyl selenium (DMSe) and trimethyl tellurium (DMTe) or diethyl ... LEVEL 1 - 13 OF 37 PATENTS 5,205,927 Apr. 27, 1993 Apparatus for treatment of soils contaminated with organic pollutants INVENTOR: Wickramanayake, Godage B., Columbus, Ohio SUM: ... J., and Bader, H., 1983, Rate Constants of Reactions of Ozone with Organic and Inorganic Compounds in Water-I, Water Research, Vol. 17, pp. 173-183; reported that the addition of sodium bicarbonate and dimethyl mercury increased the stability of ozone at high pH. An increase in base (NaOH) concentration from 1 N to 20 N also results in the extension of the half-life of ozone by more than three orders of magnitude. However, such ... LEVEL 1 - 14 OF 37 PATENTS 5,202,283 Apr. 13, 1993 Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species INVENTOR: Younger, Charles R., Anaheim Hills Hess, Kenneth L., Yorba Linda Irvine, Stuart J. C., Moorpark Gertner, Edward R., Moorpark Johnston, Shawn L., Moorpark, California DETDESC: ... accordance with the invention, because the transport of the dopant is most likely via methyl radical exchange with the dopant source indium. Some radical exchange may occur with ethyl radicals and in lesser amounts with higher alkyls, i.e., isopropyl. Dimethyl mercury could also be used as a source of free methyl radicals. The preferred flow rates for the reactor vessel 15 depend on the size of the vessel in use but to a first approximation should scale with ... LEVEL 1 - 15 OF 37 PATENTS 5,123,995 Jun. 23, 1992 Low-temperature, photo-induced epitaxy INVENTOR: Stinespring, Charter D., Arthurdale, West Virginia Freedman, Andrew, Chelmsford, Massachusetts DETDESC: ... in the working example to form a thin layer CdTe crystal, one may also employ other metalorganic compounds that are capable of forming a metallic material upon photolysis, such as diethyl tellurium, dimethyl mercury, or trimethyl gallium. In particular, single-element crystal, e.g., Cd, or ternary or quarternary compounds, e.g., Hg 1-x Cd x Te, may be prepared in a similar manner. For ... ... metalorganic compounds other than DMCd and DMTe are used to from a thin film of epitaxial material, light of wavelengths other than 193 nm may have to be used to irradiate the admixture. In this context, it is to be noted that dimethyl mercury like DMCd and DMTe, also adsorbs 193 nm photons strongly. Also note that although metalorganic precursors are beam-deposited on the substrate surface in the embodiment disclosed herein, other proper methods for depositing the precursors ... LEVEL 1 - 16 OF 37 PATENTS 5,080,971 Jan. 14, 1992 Magnetic recording medium INVENTOR: Yokoyama, Kenji, Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan DETDESC: ... In formula (B), p is equal to 1 or 2. Examples of the compounds of formula (B) include diethyl zinc, dimethyl zinc, methyl iodide mercury, methyl iodide magnesium, ethyl bromide magnesium, dimethyl mercury, dimethyl selenium, dimethyl magnesium, diethyl magnesium, diphenyl magnesium, dimethyl zinc, di-n-propyl zinc, di-n-butyl zinc, diphenyl zinc, diphenyl cadmium, diethyl mercury, di- ... LEVEL 1 - 17 OF 37 PATENTS 5,069,967 Dec. 3, 1991 Magnetic recording medium INVENTOR: Yokoyama, Kenji, Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan DETDESC: ... In formula (B), p is equal to 1 or 2. Examples of the compounds of formula (B) include diethyl zinc, dimethyl zinc, methyl iodide mercury, methyl iodide magnesium, ethyl bromide magnesium, dimethyl mercury, dimethyl selenium, dimethyl magnesium, diethyl magnesium, diphenyl magnesium, dimethyl zinc, di-n-propyl zinc, di-n-butyl zinc, diphenyl zinc, diphenyl cadmium, diethyl mercury, di- ... LEVEL 1 - 18 OF 37 PATENTS 5,034,483 Jul. 23, 1991 Process for preparing high density, broad molecular weight distribution alpha-olefin polymers INVENTOR: Miro, Nemesio D., North Brunswick, New Jersey Nowlin, Thomas E., Somerset, New Jersey DETDESC: ... added to the synthesis mixture which is in excess or that deposited onto the carrier, the excess must be removed, e.g., by decantation. The metals of Group IIB used herein are zinc, cadmium or mercury. Suitable compounds of such metals are organic compoundsd thereof, e.g., dimethyl mercury, diethyl mercury, dimethyl cadmium, diethyl cadmium, organic zinc compounds, e.g., zinc alkyl halides or dialkyl zinc compounds, preferably they are organic zinc compounds, more preferably zinc alkyl halides or zinc ... LEVEL 1 - 19 OF 37 PATENTS 5,024,927 Jun. 18, 1991 Information recording medium INVENTOR: Yamada, Katsuyuki, Yokohama, Japan Ide, Yukio, Mishima, Japan Harigaya, Makoto, Hiratsuka, Japan Iwasaki, Hiroko, Tokyo, Japan DETDESC: ... beryllium, organobismuth compounds such as trimethyl bismuth and triethyl bismuth, organocadmium compounds such as dimethyl cadmium and diethyl cadmium, organogermanium compounds such as tetramethyl germanium and tetraethyl germanium, organomercury compounds such as dimethyl mercury and diethyl mercury, organoindium compounds such as trimethyl indium, triethyl indium, triisobutyl indium and tributyl indium, organolithium compounds such as butyl lithium, organomagnesium compounds such as dimethyl magnesium, organophosphorus compounds such ... LEVEL 1 - 20 OF 37 PATENTS 5,010,033 Apr. 23, 1991 Process for producing compound semiconductor using an amorphous nucleation site INVENTOR: Tokunaga, Hiroyuki, Kawasaki, Japan Yamagata, Kenji, Atsugi, Japan Yonehara, Takao, Atsugi, Japan DETDESC: ... included dimethyl zinc, diethyl zinc (Zn(C2H5)2), dimethyl cadmium (Cd(CH3)2), diethyl cadmium, dipropyl cadmium (Cd(C3H7)2), dibutyl cadmium (Cd(C4H9)2), dimethyl mercury (Hg(CH3)2), diethyl mercury (Hg(C2H5)2), etc., and as the starting material (VI) hydrogen sulfide (H2S), selenium hydride, dimethyl selenium, diethyl selenium (Se(C2H5)2), ... LEVEL 1 - 21 OF 37 PATENTS 4,950,621 Aug. 21, 1990 Method of growing crystalline layers by vapor phase epitaxy INVENTOR: Irvine, Stuart J., Malvern, England Mullin, John B., West Malvern, England Giess, Jean, Malvern, England SUM: ... example passing the gas stream over liquid mercury heated to a required temperature. The atmosphere of Hg may additionally or alternatively be provided by a photolytically unstable mercury compound such as dimethyl mercury which will readily decompose in the presence of electromagnetic, especially uv, radiation. The partial pressure of the mercury atmosphere in the reaction zone is preferably greater than 10< - 2 > atmosphere, most preferably greater than 2 ... ... increase the area of epitaxial growth. As an example, where x is < 1 and the atmosphere of Hg is provided by a supply of Hg vapour, the additional alkyl compound may be a mercury alkyl, especially dimethyl mercury. Where x = 1, a mercury may still be used provided its concentration in the gas stream is sufficiently low to prevent the Hg it liberates during photolysis from reacting with tellurium. As a further ... DETDESC: ... for example Al from (CH3)3 Al; Ga from (CH3)3 Ga; As from (CH3)3 As; and P from (CH3)3P. The bubbler 25 may contain a mercury alkyl such as dimethyl mercury instead. In this case, the mercury alkyl is introduced into the vessel 16 in the same manner as the dopant. A supply of helium via a line 43 controlled by the controller 35 is provided to ... ... being situated 4.5 cm from the bottom of the inside of the furnace. In all Examples, cadmium telluride CdTe was used as the substrate 20, and the content of the bubblers 6, 7 and 25 were dimethyl cadmium, diethyl telluride, and dimethyl mercury respectively. The temperature of each bubbler was maintained at 25o C. unelss otherwise stated. The bubblers were designed such that the helium gas leaving each bubbler was substantially saturated with the alkyl at the bubbler temperature. The mercury lamp 40 ... ... C., and the mercury bath 19o to 215o C. After 45 minutes of growth, an apitaxial CMT layer of 0.4 micron thickness and 1.8 cm<2 > epitaxial surface area was found to have formed. The presence of dimethyl mercury in the vessel 16 was therefore shown to produce a significant increase in yield (i.e. epitaxial surface area). EXAMPLE 5 Epitaxial Multi Layer Growth LEVEL 1 - 22 OF 37 PATENTS 4,919,304 Apr. 24, 1990 Bubbler cylinder device INVENTOR: Markowicz, Marion, Basking Ridge, New Jersey SUM: ... other objectives of the invention, there is provided a cylinder and dip tube package suitable for containing electronic grade organometallic compounds in liquid form such as, for example, diethyltelluride diethyl zinc, dimethyl mercury, dimethyltelluride, and other group II, III, V and VI metal alkyls. The package comprises a stainless steel block welded to a stainless steel cylindrical container, and a dip tube, the block having ... LEVEL 1 - 23 OF 37 PATENTS 4,889,767 Dec. 26, 1989 Magnetic recording medium INVENTOR: Yokoyama, Kenji, Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan DETDESC: ... In formula (B), p is equal to 1 or 2. Examples of the compounds of formula (B) include diethyl zinc, dimethyl zinc, methyl iodide mercury, methyl iodide magnesium, ethyl bromide magnesium, dimethyl mercury, dimethyl selenium, dimethyl magnesium, diethyl magnesium, diphenyl magnesium, dimethyl zinc, di-n-propyl zinc, di-n-butyl zinc, diphenyl zinc, diphenyl cadmium, diethyl mercury, di- ... LEVEL 1 - 24 OF 37 PATENTS 4,880,687 Nov. 14, 1989 Magnetic recording medium INVENTOR: Yokoyama, Kenji, Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan DETDESC: ... In formula (B), p is equal to 1 or 2. Examples of the compounds of formula (B) include diethyl zinc, dimethyl zinc, methyl iodide mercury, methyl iodide magnesium, ethyl bromide magnesium, dimethyl mercury, dimethyl selenium, dimethyl magnesium, diethyl magnesium, diphenyl magnesium, dimethyl zinc, di-n-propyl zinc, di-n-butyl zinc, diphenyl zinc, diphenyl cadmium, diethyl mercury, di- ... LEVEL 1 - 25 OF 37 PATENTS 4,866,021 Sep. 12, 1989 Catalyst composition for preparing high density, broad molecular weight distribution alpha-olefin polymers INVENTOR: Miro, Nemesio D., North Brunswick, New Jersey Nowlin, Thomas E., Somerset, New Jersey DETDESC: ... added to the synthesis mixture which is in excess of that deposited onto the carrier, the excess must be removed, e.g., by decantation. The metals of Group IIB used herein are zinc, cadmium or mercury. Suitable compounds of such metals are organic compounds thereof, e.g., dimethyl mercury, diethyl mercury, dimethyl cadmium, diethyl cadmium, organic zinc compounds, e.g., zinc alkyl halides or dialkyl zinc compounds, preferably they are organic zinc compounds, more preferably zinc alkyl halides or zinc ... LEVEL 1 - 26 OF 37 PATENTS 4,859,625 Aug. 22, 1989 Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy INVENTOR: Matsumoto, Fumio, Miyagi, Japan DETDESC: ... DMTe) for alkyl indium, alkyl gallium and AsH3 Further, a single crystalline thin film of Hg x Cd 1-x Te may also be grown by using gases of dimethyl mercury (DMHg), dimethyl cadmium (DMCd) and dimethyl tellurium (DMTe). FIG. 7A is an embodiment according to the present invention in which a manufacturing process for a superlattice structure is schematically shown. In the superlattice ... LEVEL 1 - 27 OF 37 PATENTS 4,844,736 Jul. 4, 1989 Method for the preparation of finely divided metal particles INVENTOR: Shimo, Nobuo, Ichihara, Japan Yoshihara, Keitaro, Okazaki, Japan Nakashima, Nobuaki, Suita, Japan SUM: ... metal carbonyls are preferred in respect of the small bond energy. Exemplary of the metallic compounds suitable as the starting material of the inventive method are tetramethyl lead, tetraethyl lead, trimethyl bismuth, trimethyl thallium, dimethyl mercury, dimethyl zinc, diethyl zinc, dimethyl cadmium, diethyl cadmium and the like. The concentration of the metallic compound in the vapor phase should be at least 10<15 > molecules per cm<3 > or, preferably, at least ... LEVEL 1 - 28 OF 37 PATENTS 4,826,602 May 2, 1989 Reduction of trace elements to the elemental form by microorganisms INVENTOR: Revis, Nathaniel W., Oak Ridge, Tennessee Benson, Suzanne B., Kingston, Tennessee Osborne, Tanya R., Oak Ridge, Tennessee SUM: ... can also be used to treat organometallic compounds, more particularly, compounds in which the metal-carbon bond is covalent. Exemplary of organometallic compounds which can be treated by the process of this invention are methyl mercury, dimethyl mercury, diphenyl lead, dipropyl cadmium, tetraethyl lead and triethyl tin. "Elemental metal" means the metal in its zerovalent condition. Waste waters are preferably contacted with the selected Pseudomonas culture under aerobic conditions. The ... LEVEL 1 - 29 OF 37 PATENTS 4,767,494 Aug. 30, 1988 Preparation process of compound semiconductor INVENTOR: Kobayashi, Naoki, Iruma, Japan Makimoto, Toshiki, Tokorozawa, Japan Horikoshi, Yoshiji, Akishima, Japan DETDESC: ... interruption thereof were repeated at a time interval of one second. After 3600 cycles, the growth was 1.02 mu m in terms of thickness and one ZnSe molecular layer was formed during each cycle. When dimethyl mercury (CH3)2Hg was used as an organometallic compound while H2Se was used as a hydride, a thin HgSe film was grown over the (100) surface of a HgSe substrate in a ... ... time interval of one second. After 3600 cycles, the growth in terms of thickness was 1.02 mu m and a single ZnSe molecular layer was formed during each cycle. By using dimethyl mercury (CH3)2Hg as an organometallic compound and H2Se as a hydride, an HgSe thin film was grown over the (100) surface of an HgSe substrate under the same conditions as those in the growth of the ZnSe ... LEVEL 1 - 30 OF 37 PATENTS 4,762,576 Aug. 9, 1988 Close space epitaxy process INVENTOR: Wilson, Herbert L., Woodbridge, Virginia Guiterrez, William A., Woodbridge, Virginia DETDESC: ... reactive gases before, during, or after the epitaxial growth to provide in situ formation of multilayers, passivation, and device structure. Some of the gases used may be hydrogen selenide, diethyl telluride, dimethyl cadmium, dimethyl mercury, other organic metallics, hydrides, silane, germane, etc. Dopants may also be introduced this way. These gases could serve to modify the electrical and optical properties of the epitaxially grown layers. The embodiment as shown by ... LEVEL 1 - 31 OF 37 PATENTS 4,728,427 Mar. 1, 1988 Reduction of trace elements to the elemental form by microorganisms INVENTOR: Revis, Nathaniel W., 1060 W. Outer Dr., Oak Ridge, Tennessee 37830 Benson, Suzanne B., 73 Paint Rock Ferry Rd., Apt. 12, Kingston, Tennessee 37763 Osborne, Tanya R., 108 Lynwood La., Oak Ridge, Tennessee 37830 Hadden, Charles T., 165 Waddell Cir., Oak Ridge, Tennessee 37830 SUM: ... can also be used to treat organometallic compounds, more particularly, compounds in which the metal-carbon bond is covalent. Exemplary of organometallic compounds which can be treated by the process of this invention are methyl mercury, dimethyl mercury, diphenyl lead, dipropyl cadmium, tetraethyl lead and triethyl tin. "Elemental metal" means the metal in its zerovalent condition. Waste waters are preferably contacted with the selected Pseudomonas culture under aerobic conditions. The ... LEVEL 1 - 32 OF 37 PATENTS 3,933,431 Jan. 20, 1976 Method and apparatus for sampling atmospheric mercury INVENTOR: Trujillo, Patricio E., Santa Fe, New Mexico Campbell, Evan E., Los Alamos, New Mexico Eutsler, Bernard C., Los Alamos, New Mexico DETDESC: ... specific surface areas ranging from 2.80 to 5.24 m<2> /g, depending on the measuring technique. The purpose of adsorber material 3 is to selectively and quantitatively adsorb organic mercurial vapors, e.g., those of methyl mercury chloride, dimethyl mercury, ethyl mercury chloride, diethyl mercury, and diphenyl mercury, while permitting the free passage of metallic mercury vapor therethrough. Adsorber material 3 may be such as to temporarily detrain mercury vapor from the ... LEVEL 1 - 33 OF 37 PATENTS 3,923,597 Dec. 2, 1975 Mercury concentration by the use of microorganisms INVENTOR: Chakrabarty, Ananda M., Latham, New York Friello, Denise A., Schenectady, New York Mylroie, Joan R., Scotia, New York SUM: ... States is severely restricted. Mercury poisoning results when mercury salts from industrial effluents deposit in river or lake sediments and are then acted upon by anaerobic bacteria. These bacteria convert mercury salts to monoethyl and dimethyl mercury. These methylated mercury derivatives, particularly the monomethyl mercury become stored in the bodies of fish and, later, consumption of the flesh of such fish leads to acute mercury poisoning. Chemical methods at selectively binding mercury from industrial ... LEVEL 1 - 34 OF 37 PATENTS 3,802,910 Apr. 9, 1974 RECOVERY OF MERCURY FROM MERCUROUS BEARING LIQUIDS INVENTOR: Gerow, Raymond F., Berkeley Hts., New Jersey Soule, Stanley B., Springfield, New Jersey SUM: ... for the high levels of mercury per ounce in fish. The methylated inorganic mercury is capable of concentration in a biological system and hence the great danger. The mercury itself or inorganic mercury is biologically converted to dimethyl mercury which is the form predominantly found in the fish. We now know that inorganic mercury can be alkylated to methyl mercury in natural systems, and this points up the present dimensions of the mercury pollution problem. Broken ... LEVEL 1 - 35 OF 37 PATENTS 3,790,370 Feb. 5, 1974 REMOVAL AND RECOVERY OF METALS FROM POLLUTED WATERS INVENTOR: Lalancette, Jean-Marc, Sherbrooke, Quebec, Canada DETDESC: ... smoke and the flue gases formed are submitted to pyrolytic temperatures in the upper portion of the furnace 28, for example 500o to 700o C. before leaving the furnace. The pyrolytic temperature will avoid the formation of dimethyl mercury or other volatile mercury derivatives which are a most toxic gas. Also with the pyrolytic temperatures there is avoided the production of tar or other condensable gas while favouring the formation of water and mercury vapors and sulfur dioxide. The gases are then ... LEVEL 1 - 36 OF 37 PATENTS 3,762,938 Oct. 2, 1973 DEPOSITION OF THIN METAL FILMS INVENTOR: Ridenour, Richard E., Midland, Michigan Groves, Kenneth O., Midland, Michigan SUM: ... hydride and react with aluminum hydride to form a hydride including the heavy metal, are employable in the claimed process. More specifically, compounds with a heavy metal to carbon bond such as cobalt octacarbonyl, dimethyl-mercury, cupric cyanide, and diphenylmercury; a metal to oxygen bond such as cobalt (III) acetate, tetraethoxy titanium, tetra(diethylhydroxylamino) tin, tetraphenoxy tin, trimethylplatinum acetylacetonate, and titanium oxytrichloride; a metal to nitrogen ... LEVEL 1 - 37 OF 37 PATENTS 3,697,535 Oct. 10, 1972 4,5-DIHYDROIMIDAZOLINE-3-OXIDE-1-OXYL INVENTOR: Leute, Richard K., Mountain View, California Ullman, Edwin F., Atherton, California DETDESC: ... 3.96; N, 6.46. Found: C, 36.43; H, 4.09; N, 6.43. Other suitable dialkyl and diaryl compounds which could be utilized in the foregoing example instead of diphenyl mercury are as follows: dimethyl mercury dibutyl mercury dicyclohexyl mercury dibenzyl mercury dinaphthyl mercury dicarbethoxyphenyl mercury bis-(3-hexenyl) mercury bis-(methoxybenzyl) mercury bis-(chloroethylphenyl) mercury bis-(dimethylamino-ethyl) mercury