LEVEL 1 - 37 PATENTS                               
1. 5,660,806, Aug. 26, 1997, Process for removing lead from sandblasting wastes  containing paint chips, Fristad, William E., Santa Rosa, California Virnig,
Michael J., Tucson, Arizona Elliott, Dana K., Santa Rosa, California, Henkel
Corporation, Plymouth Meeting, Pennsylvania (02)

2. 5,563,285, Oct. 8, 1996, Production of silicon-phosphorus containing
compositions, Blount, David H., 6728 Del Cerro Blvd., San Diego, California
92120

3. 5,505,925, Apr. 9, 1996, Process for removing heavy metals from soil,
Fristad, William E., Santa Rosa, California, Cognis, Inc., Santa Rose,
California (02)

4. 5,494,649, Feb. 27, 1996, Process for removing heavy metals from paint chips, Fristad, William E., Santa Rosa, California Virnig, Michael J., Santa Rosa,
California Cassel, Jonathan M., Half Moon Ray, California Elliot, Dana K., Santa Rosa, California, Cognis, Inc., Santa Rosa, California (02)

5. 5,466,367, Nov. 14, 1995, Industrial waste water treatment, Coate, Robert B., Waco, Texas Towles, John T., Bruceville, Texas, Environmental Restoration
Services, Inc., Waco, Texas (02), Date Transaction Recorded: Dec. 07, 1995
ASSIGNMENT OF ASSIGNOR'S INTEREST (SEE DOCUMENT FOR DETAILS). TOWLES, JOHN T. 208 OTIS DRIVE WACO, TEXAS 76710 Reel & Frame Number: 7732/0387

6. 5,401,392, Mar. 28, 1995, Process for eliminating mercury and possibly
arsenic in hydrocarbons, Courty, Philippe, Houilles, France Dufresne, Pierre,
Rueil Malmaison, France Boitiaux, Jean P., Poissy, France Martino, Germain,
Poissy, France, Institut Francais du Petrole, Rueil Malmaison, France (03)

7. 5,322,628, Jun. 21, 1994, Method for simultaneously drying and removing
metallic and organic mercury from fluids, Yan, Tsoung Y., Philadelphia,
Pennsylvania, Mobil Oil Corporation, Fairfax, Virginia (02)

8. 5,318,666, Jun. 7, 1994, Method for via formation and type conversion in
group II and group VI materials, Elkind, Jerome L., Dallas, Texas Orloff,
Glennis J., Plano, Texas Smith, Patricia B., Grapevine, Texas, Texas Instruments Incorporated, Dallas, Texas (02)

9. 5,304,820, Apr. 19, 1994, Process for producing compound semiconductor and
semiconductor device using compound semiconductor obtained by same, Tokunaga,
Hiroyuki, Kawasaki, Japan Yamagata, Kenji, Atsugi, Japan Yonehara, Takao,
Atsugi, Japan, Canon Kabushiki Kaisha, Tokyo, Japan (03)

10. 5,304,693, Apr. 19, 1994, Process for eliminating mercury from steam
cracking installations, Boitiaux, Jean-Paul, Poissy, France Sarrazin, Patrick,
Rueil Malmaison, France, Institut Francais du Petrole, Rueil Malmaison, France
(03)

11. 5,269,943, Dec. 14, 1993, Method for treatment of soils contaminated with
organic pollutants, Wickramanayake, Godage B., Cranbury, New Jersey, Battelle
Memorial Institute, Richland, Washington (02)

12. 5,212,113, May 18, 1993, Process for the selective epitaxy and etching of a  III-V material in the same OMCVD growth frame, Azoulay, Rosette, Fontenay aux
Rose, France Dugrand, Louis, Chelles, France, France Telecom Etablissement
Autonome de Droit Public (Centre National d'Etudes des Telecommunications), Issy les Moulineaux, France (07)

13. 5,205,927, Apr. 27, 1993, Apparatus for treatment of soils contaminated with organic pollutants, Wickramanayake, Godage B., Columbus, Ohio, Battelle Memorial Institute, Columbus, Ohio (02)

14. 5,202,283, Apr. 13, 1993, Technique for doping MOCVD grown crystalline
materials using free radical transport of the dopant species, Younger, Charles
R., Anaheim Hills Hess, Kenneth L., Yorba Linda Irvine, Stuart J. C., Moorpark
Gertner, Edward R., Moorpark Johnston, Shawn L., Moorpark, California, Rockwell  International Corporation, Seal Beach, California (02)

15. 5,123,995, Jun. 23, 1992, Low-temperature, photo-induced epitaxy,
Stinespring, Charter D., Arthurdale, West Virginia Freedman, Andrew, Chelmsford, Massachusetts, Aerodyne Research, Inc., Billerica, Massachusetts (02)

16. 5,080,971, Jan. 14, 1992, Magnetic recording medium, Yokoyama, Kenji,
Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan  Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan, TDK Corporation,
Tokyo, Japan (03)

17. 5,069,967, Dec. 3, 1991, Magnetic recording medium, Yokoyama, Kenji, Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan Ueda,
Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan, TDK Corporation, Tokyo,
Japan (03)

18. 5,034,483, Jul. 23, 1991, Process for preparing high density, broad
molecular weight distribution alpha-olefin polymers, Miro, Nemesio D., North
Brunswick, New Jersey Nowlin, Thomas E., Somerset, New Jersey, Mobil Oil
Corporation, Fairfax, Virginia (02)

19. 5,024,927, Jun. 18, 1991, Information recording medium, Yamada, Katsuyuki,
Yokohama, Japan Ide, Yukio, Mishima, Japan Harigaya, Makoto, Hiratsuka, Japan
Iwasaki, Hiroko, Tokyo, Japan, Ricoh Company, Ltd., Tokyo, Japan (03)

20. 5,010,033, Apr. 23, 1991, Process for producing compound semiconductor using an amorphous nucleation site, Tokunaga, Hiroyuki, Kawasaki, Japan Yamagata,
Kenji, Atsugi, Japan Yonehara, Takao, Atsugi, Japan, Canon Kabushiki Kaisha,
Tokyo, Japan (03)

21. 4,950,621, Aug. 21, 1990, Method of growing crystalline layers by vapor
phase epitaxy, Irvine, Stuart J., Malvern, England Mullin, John B., West
Malvern, England Giess, Jean, Malvern, England, Secretary of the State for
Defence in Her Majesty's Government of the United Kingdom of Great Britain and
Northern Ireland, United Kingdom (07)

22. 4,919,304, Apr. 24, 1990, Bubbler cylinder device, Markowicz, Marion,
Basking Ridge, New Jersey, American Cyanamid Company, Stamford, Connecticut (02) 
23. 4,889,767, Dec. 26, 1989, Magnetic recording medium, Yokoyama, Kenji,
Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan  Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan, TDK Corporation,
Tokyo, Japan (03)

24. 4,880,687, Nov. 14, 1989, Magnetic recording medium, Yokoyama, Kenji,
Nagano, Japan Nakayama, Masatoshi, Nagano, Japan Shimozawa, Toru, Nagano, Japan  Ueda, Kunihiro, Nagano, Japan Maruta, Fumio, Nagano, Japan, TDK Corporation,
Tokyo, Japan (03), Date Transaction Recorded: Apr. 15, 1993 ASSIGNMENT OF
ASSIGNOR'S INTEREST (SEE DOCUMENT FOR DETAILS). GENERAL ELECTRIC COMPANY ONE RIVER ROAD, SCHENECTADY, NY 12345 Reel & Frame Number: 6527/0398

25. 4,866,021, Sep. 12, 1989, Catalyst composition for preparing high density,
broad molecular weight distribution alpha-olefin polymers, Miro, Nemesio D.,
North Brunswick, New Jersey Nowlin, Thomas E., Somerset, New Jersey, Mobil Oil
Corp., New York, New York (02)

26. 4,859,625, Aug. 22, 1989, Method for epitaxial growth of compound
semiconductor using MOCVD with molecular layer epitaxy, Matsumoto, Fumio,
Miyagi, Japan, Research Development Corporation of Japan, Junichi Nishizawa and  Oki Electric Industry Co., Ltd., Japan (03)

27. 4,844,736, Jul. 4, 1989, Method for the preparation of finely divided metal  particles, Shimo, Nobuo, Ichihara, Japan Yoshihara, Keitaro, Okazaki, Japan
Nakashima, Nobuaki, Suita, Japan, Idemitsu Kosan Co., Ltd., Tokyo, Japan (03)

28. 4,826,602, May 2, 1989, Reduction of trace elements to the elemental form by microorganisms, Revis, Nathaniel W., Oak Ridge, Tennessee Benson, Suzanne B.,
Kingston, Tennessee Osborne, Tanya R., Oak Ridge, Tennessee, Oak Ridge Research  Institute, Oak Ridge, Tennessee (02)

29. 4,767,494, Aug. 30, 1988, Preparation process of compound semiconductor,
Kobayashi, Naoki, Iruma, Japan Makimoto, Toshiki, Tokorozawa, Japan Horikoshi,
Yoshiji, Akishima, Japan, Nippon Telegraph & Telephone Corporation, Tokyo, Japan (03)

30. 4,762,576, Aug. 9, 1988, Close space epitaxy process, Wilson, Herbert L.,
Woodbridge, Virginia Guiterrez, William A., Woodbridge, Virginia, The United
States of America as represented by the Secretary of the Army, Washington,
District of Columbia (06)

31. 4,728,427, Mar. 1, 1988, Reduction of trace elements to the elemental form
by microorganisms, Revis, Nathaniel W., 1060 W. Outer Dr., Oak Ridge, Tennessee  37830 Benson, Suzanne B., 73 Paint Rock Ferry Rd., Apt. 12, Kingston, Tennessee  37763 Osborne, Tanya R., 108 Lynwood La., Oak Ridge, Tennessee 37830 Hadden,
Charles T., 165 Waddell Cir., Oak Ridge, Tennessee 37830

32. 3,933,431, Jan. 20, 1976, Method and apparatus for sampling atmospheric
mercury, Trujillo, Patricio E., Santa Fe, New Mexico Campbell, Evan E., Los
Alamos, New Mexico Eutsler, Bernard C., Los Alamos, New Mexico, The United
States of America as represented by the United States Energy Research and
Development Administration, Washington, District of Columbia (06)

33. 3,923,597, Dec. 2, 1975, Mercury concentration by the use of microorganisms, Chakrabarty, Ananda M., Latham, New York Friello, Denise A., Schenectady, New
York Mylroie, Joan R., Scotia, New York, General Electric Company, Schenectady,  New York (02)

34. 3,802,910, Apr. 9, 1974, RECOVERY OF MERCURY FROM MERCUROUS BEARING LIQUIDS, Gerow, Raymond F., Berkeley Hts., New Jersey Soule, Stanley B., Springfield, New Jersey, GAF Corporation, New York, New York (02), Date Transaction Recorded:
Jun. 14, 1989 SECURITY INTEREST CHASE MANHATTAN BANK (NATIONAL ASSOCIATION) THE, AS COLLATERAL AGENT Reel & Frame Number: 5122/0370 Date Transaction Recorded:
Oct. 30, 1989 CHANGE OF NAME - ADDITIONAL PROPERTIES MAY SUBSEQUENTLY BE INDEXED AGAINST THE ORIGINAL DOCUMENT. THE PAPER REQUESTING SUCH INDEXING MUST
ADEQUATELY IDENTIFY ALL SUCH PROPERTIES AND MUST INDICATE THE REEL AND FRAME
NUMBER ON WHICH THE ORIGINAL DOCUMENT IS RECORDED. EFFECTIVE ON 04/11/1989 GAF
CHEMICALS CORPORATION A CORP. OF DE Reel & Frame Number: 5251/0071 Date
Transaction Recorded: Oct. 30, 1990 CHANGE OF NAME - ADDITIONAL PROPERTIES MAY SUBSEQUENTLY BE INDEXED AGAINST THE ORIGINAL DOCUMENT. THE PAPER REQUESTING SUCH INDEXING MUST ADEQUATELY IDENTIFY ALL SUCH PROPERTIES AND MUST INDICATE THE REEL AND FRAME NUMBER ON WHICH THE ORIGINAL DOCUMENT IS RECORDED. EFFECTIVE APRIL 10, 1989 DORSET INC., A DE CORP. Reel & Frame Number: 5250/0940 Date Transaction
Recorded: Dec. 03, 1990 SECURITY INTEREST CHASE MANHATTAN BANK (NATIONAL
ASSOCIATION), THE Reel & Frame Number: 5604/0020 Date Transaction Recorded: Jun. 17, 1991 ASSIGNMENT OF ASSIGNORS INTEREST ISP 3 CORP A CORP OF DELAWARE Reel &
Frame Number: 5949/0001 Date Transaction Recorded: Jun. 17, 1991 CHANGE OF NAME  - ADDITIONAL PROPERTIES MAY SUBSEQUENTLY BE INDEXED AGAINST THE ORIGINAL
DOCUMENT. THE PAPER REQUESTING SUCH INDEXING MUST ADEQUATELY IDENTIFY ALL SUCH
PROPERTIES AND MUST INDICATE THE REEL AND FRAME NUMBER ON WHICH THE ORIGINAL
DOCUMENT IS RECORDED. EFFECTIVE ON 06/06/1991 ISP INVESTMENTS INC. A CORP OF
DELAWARE Reel & Frame Number: 5949/0051 Date Transaction Recorded: Aug. 13, 1992 RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). GAF CHEMICALS CORPORATION
SUTTON LABORATORIES, INC. GAF BUILDING MATERIALS CORPORATION Reel & Frame
Number: 6243/0208

35. 3,790,370, Feb. 5, 1974, REMOVAL AND RECOVERY OF METALS FROM POLLUTED WATERS Lalancette, Jean-Marc, Sherbrooke, Quebec, Canada, Universite de Sherbrooke, Sherbrooke, Quebec, Canada (03)

36. 3,762,938, Oct. 2, 1973, DEPOSITION OF THIN METAL FILMS, Ridenour, Richard E., Midland, Michigan Groves, Kenneth O., Midland, Michigan, The Dow Chemical Company, Midland, Michigan (02)

37. 3,697,535, Oct. 10, 1972, 4,5-DIHYDROIMIDAZOLINE-3-OXIDE-1-OXYL, Leute,
Richard K., Mountain View, California Ullman, Edwin F., Atherton, California,
Synvar Associates,, Palo Alto, California (02)
LEVEL 1 - 1 OF 37 PATENTS                             
                                   5,660,806

                                 Aug. 26, 1997

               Process for removing lead from sandblasting wastes
                             containing paint chips

INVENTOR: Fristad, William E., Santa Rosa, California
Virnig, Michael J., Tucson, Arizona
Elliott, Dana K., Santa Rosa, California

 SUM:
   ... reduction to mercury metal by bacterial action, including the highly
insoluble mercuric sulfide. The conversion of elemental mercury into water
soluble ionic forms is also biologically possible as well as conversion into
volatile  dimethyl mercury.  All forms and compounds of mercury are toxic
including elemental mercury. ["The Merck Index," 11 Ed., Merck & Co., Inc., Rahway, N.J., 1989, p 5805; P. C. Bidstrup, "Toxicity of Mercury and its ...

                           LEVEL 1 - 2 OF 37 PATENTS                             
                                   5,563,285

                                  Oct. 8, 1996

            Production of silicon-phosphorus containing compositions

INVENTOR: Blount, David H., 6728 Del Cerro Blvd., San Diego, California 92120

 DETDESC:
   ... oxalate

   q) succinic anhydride

   r) fumaric acid

   s) caprolactom

   t) diethyl glycol

   u) lead acetate

  v) ammonium thiocyanate

   w) methyl magnesium chloride

   x) zinc

   y)  dimethyl mercury 

   z) mixtures of the above.

 
EXAMPLE 18

   About 5 parts by weight of silicon tetrachloride, 5 parts by weight of
phosphorus trichloride, 30 parts by weight of propylene oxide and 30 ...


                           LEVEL 1 - 3 OF 37 PATENTS                             
                                   5,505,925

                                  Apr. 9, 1996

                  Process for removing heavy metals from soil

INVENTOR: Fristad, William E., Santa Rosa, California

 SUM:
   ... reduction to mercury metal by bacterial action, including the highly
insoluble mercuric sulfide. The conversion of elemental mercury into water
soluble ionic forms is also biologically possible as well as conversion into
volatile  dimethyl mercury.  All forms and compounds of mercury are toxic
including elemental mercury. ["The Merck Index," 11 Ed., Merck & Co., Inc., Rahway, N.J., 1989, p 5805; P. C. Bidstrup, "Toxicity of Mercury and its ...




                           LEVEL 1 - 4 OF 37 PATENTS                             
                                   5,494,649

                                 Feb. 27, 1996

               Process for removing heavy metals from paint chips

INVENTOR: Fristad, William E., Santa Rosa, California
Virnig, Michael J., Santa Rosa, California
Cassel, Jonathan M., Half Moon Ray, California
Elliot, Dana K., Santa Rosa, California

 SUM:
   ... reduction to mercury metal by bacterial action, including the highly
insoluble mercuric sulfide. The conversion of elemental mercury into water
soluble ionic forms is also biologically possible as well as conversion into
volatile  dimethyl mercury.  All forms and compounds of mercury are toxic
including elemental mercury. ["The Merck Index," 11 Ed., Merck & Co., Inc., Rahway, N.J., 1989, p 5805; P. C. Bidstrup, "Toxicity of Mercury and its ...

                           LEVEL 1 - 5 OF 37 PATENTS                             
                                   5,466,367

                                 Nov. 14, 1995

                        Industrial waste water treatment

INVENTOR: Coate, Robert B., Waco, Texas
Towles, John T., Bruceville, Texas

 DETDESC:
   ... Each of these contaminates are removed to a level such that only 0.5% of  the original concentration remains in the treated output. Although mercury as an element is only somewhat reduced by ozone treatment, aqueous solutions of
 dimethyl mercury  are removed such that it can no longer be detected. The
following compounds listed in Table I are also removed to a greater or lesser
extent by ozone. However, all of the following compounds are substantially
removed by either ...


                           LEVEL 1 - 6 OF 37 PATENTS                             
                                   5,401,392

                                 Mar. 28, 1995

            Process for eliminating mercury and possibly arsenic in
                                  hydrocarbons

INVENTOR: Courty, Philippe, Houilles, France
Dufresne, Pierre, Rueil Malmaison, France
Boitiaux, Jean P., Poissy, France
Martino, Germain, Poissy, France

 SUM:
   ... as the batches contain compounds other than elementary metals, for
example, for arsenic, arsines comprising chains containing hydrocarbon
containing two or more than two carbon atoms or else, for mercury,  dimethyl 
 mercury  and other mercury compounds comprising chains containing hydrocarbon
containing two or more than two carbon atoms, and optionally other nonmetal
elements (sulfur, nitrogen . . . ).

   Further, other tests carried out by the ...
                           LEVEL 1 - 7 OF 37 PATENTS                             
                                   5,322,628

                                 Jun. 21, 1994

           Method for simultaneously drying and removing metallic and
                          organic mercury from fluids

INVENTOR: Yan, Tsoung Y., Philadelphia, Pennsylvania

 SUM:
   ... mercury are easy to remove using conventional methods, including silver.  Organic mercury, on the other hand, is very difficult to remove using
conventional methods. While both forms of mercury exist, organic forms such as
 dimethyl mercury,  diethyl mercury and the like are more difficult to remove
using conventional mercury removal techniques and are significantly present in
the residual mercury of some natural gases. These difficult to remove organic
mercury compounds are called refractory ...

   ... natural gas source, further complicating the removal process. The
reactivities of various mercury compounds with metals such as gold, silver,
copper and iron varies greatly. It has recently been discovered that organic
mercury compounds such as  dimethyl mercury  react with gold quite readily. In
contrast, however, organic forms of mercury react little if at all with silver.  Thus, it is difficult using prior art methods to remove mercury to a low level
from a fluid such as ...

 DETDESC:
   ... 350o C. for 1 hour and then cooled to 22o C. for adsorption tests.

   Through each of the separate packed tubes at 22o C., 100 cc/min of N2
containing 15 ppb of  dimethyl mercury  was passed. The  dimethyl mercury  in a  refractory organic mercury compound. The mercury content of the effluent gas was measured using a Jerome 301 instrument. The results, shown graphically in FIG.
2, indicate the following results; Ag/4A is not effective for removing
 dimethyl mercury,  but is effective at removing metallic mercury; Au/4A is
extremely effective at removing  dimethyl mercury,  and over 95% of the organic  mercury is removed before any significant leakage of mercury in the effluent is  detected. Co-impregnation of silver and gold could lead to the formation of a
single particle alloy and is less effective. Thus, the combination of ...


                           LEVEL 1 - 8 OF 37 PATENTS                             
                                   5,318,666

                                  Jun. 7, 1994

          Method for via formation and type conversion in group II and
                               group VI materials

INVENTOR: Elkind, Jerome L., Dallas, Texas
Orloff, Glennis J., Plano, Texas
Smith, Patricia B., Grapevine, Texas

 DETDESC:
   ... L),(3)

   where CH4 is a molecule of methane gas, CH3. is a methyl radical, Hg(L) is a  lattice of mercury atoms in HgCdTe, and Hg(CH3)2 is the volatile reaction
product, i.e.,  dimethyl mercury.  In practice, both of these reactions occur
simultaneously, along with a number of other reactions.

It is important to maintain wafer structure 24 at a relatively constant and
low temperature during the reactive etching process. ...


                           LEVEL 1 - 9 OF 37 PATENTS                             
                                   5,304,820

                                 Apr. 19, 1994

                Process for producing compound semiconductor and
           semiconductor device using compound semiconductor obtained
                                    by same

INVENTOR: Tokunaga, Hiroyuki, Kawasaki, Japan
Yamagata, Kenji, Atsugi, Japan
Yonehara, Takao, Atsugi, Japan

 DETDESC:
   ... included dimethyl zinc, diethyl zinc (Zn(C2H5)2), dimethyl cadmium
(Cd(CH3)2), diethyl cadmium, dipropyl cadmium (Cd(C3H7)2), dibutyl cadmium
(Cd(C4H9)2),  dimethyl mercury  (Hg(CH3)2), diethyl mercury (Hg(C2H5)2), etc.,
and as the starting material (VI) hydrogen sulfide (H2S), selenium hydride,
dimethyl selenium, diethyl selenium (Se(C2H5)2), ...

                           LEVEL 1 - 10 OF 37 PATENTS                            
                                   5,304,693

                                 Apr. 19, 1994

              Process for eliminating mercury from steam cracking
                                 installations

INVENTOR: Boitiaux, Jean-Paul, Poissy, France
Sarrazin, Patrick, Rueil Malmaison, France

 SUM:
   ... masses incorporating copper at least partly in the sulphide form and a
mineral support.

   These different masses are very effective for trapping the metallic mercury,  but relatively ineffective when the metal is combined in the form of  dimethyl    mercury  or mercury compounds having hydrocarbon chains containing two or more  carbon atoms and optionally other non-metallic elements (sulphur, nitrogen,
etc.). In order to ensure a complete elimination of the mercury in all ...
                           LEVEL 1 - 11 OF 37 PATENTS                            
                                   5,269,943

                                 Dec. 14, 1993

            Method for treatment of soils contaminated with organic
                                   pollutants

INVENTOR: Wickramanayake, Godage B., Cranbury, New Jersey

 SUM:
   ... J., and Bader, H., 1983, Rate Constants of Reactions of Ozone with
Organic and Inorganic Compounds in Water-I, Water Research, Vol. 17, pp.
173-183; reported that the addition of sodium bicarbonate and  dimethyl mercury  increased the stability of ozone at high pH. An increase in base (NaOH)
concentration from 1 N to 20 N also results in the extension of the half-life of ozone by more than three orders of magnitude. However, such ...



                           LEVEL 1 - 12 OF 37 PATENTS                            
                                   5,212,113

                                  May 18, 1993

            Process for the selective epitaxy and etching of a III-V
                    material in the same OMCVD growth frame

INVENTOR: Azoulay, Rosette, Fontenay aux Rose, France
Dugrand, Louis, Chelles, France

 SUM:
   ... antimony (TMS).

   The deposition of layers containing zinc, cadmium or mercury takes place by
decomposition respectively of diethyl tin (DEZ), trimethyl zinc (TMZ) or
dimethyl zinc (DMZ); dimethyl cadmium (DMC) and  dimethyl mercury  (DMHg). For
the deposition of layers containing sulphur, selenium or tellurium, use is
respectively made of vapors of hydrogen sulphide (H2S); hydrogen selenide (H2Se) or dimethyl selenium (DMSe) and trimethyl tellurium (DMTe) or diethyl ...
                           LEVEL 1 - 13 OF 37 PATENTS                            
                                   5,205,927

                                 Apr. 27, 1993

           Apparatus for treatment of soils contaminated with organic
                                   pollutants

INVENTOR: Wickramanayake, Godage B., Columbus, Ohio

 SUM:
   ... J., and Bader, H., 1983, Rate Constants of Reactions of Ozone with
Organic and Inorganic Compounds in Water-I, Water Research, Vol. 17, pp.
173-183; reported that the addition of sodium bicarbonate and  dimethyl mercury  increased the stability of ozone at high pH. An increase in base (NaOH)
concentration from 1 N to 20 N also results in the extension of the half-life of ozone by more than three orders of magnitude. However, such ...



                           LEVEL 1 - 14 OF 37 PATENTS                            
                                   5,202,283

                                 Apr. 13, 1993

          Technique for doping MOCVD grown crystalline materials using
                  free radical transport of the dopant species

INVENTOR: Younger, Charles R., Anaheim Hills
Hess, Kenneth L., Yorba Linda
Irvine, Stuart J. C., Moorpark
Gertner, Edward R., Moorpark
Johnston, Shawn L., Moorpark, California

 DETDESC:
   ... accordance with the invention, because the transport of the dopant is
most likely via methyl radical exchange with the dopant source indium. Some
radical exchange may occur with ethyl radicals and in lesser amounts with higher alkyls, i.e., isopropyl.

Dimethyl mercury  could also be used as a source of free methyl radicals.

   The preferred flow rates for the reactor vessel 15 depend on the size of the  vessel in use but to a first approximation should scale with ...



                           LEVEL 1 - 15 OF 37 PATENTS                            
                                   5,123,995

                                 Jun. 23, 1992

                     Low-temperature, photo-induced epitaxy

INVENTOR: Stinespring, Charter D., Arthurdale, West Virginia
Freedman, Andrew, Chelmsford, Massachusetts

 DETDESC:
   ... in the working example to form a thin layer CdTe crystal, one may also
employ other metalorganic compounds that are capable of forming a metallic
material upon photolysis, such as diethyl tellurium,  dimethyl mercury,  or
trimethyl gallium. In particular, single-element crystal, e.g., Cd, or ternary
or quarternary compounds, e.g., Hg 1-x Cd x Te, may be prepared in a similar
manner.

   For ...

... metalorganic compounds other than DMCd and DMTe are used to from a thin
film of epitaxial material, light of wavelengths other than 193 nm may have to
be used to irradiate the admixture. In this context, it is to be noted that
 dimethyl mercury  like DMCd and DMTe, also adsorbs 193 nm photons strongly.

   Also note that although metalorganic precursors are beam-deposited on the
substrate surface in the embodiment disclosed herein, other proper methods for
depositing the precursors ...



                           LEVEL 1 - 16 OF 37 PATENTS                            
                                   5,080,971

                                 Jan. 14, 1992

                           Magnetic recording medium

INVENTOR: Yokoyama, Kenji, Nagano, Japan
Nakayama, Masatoshi, Nagano, Japan
Shimozawa, Toru, Nagano, Japan
Ueda, Kunihiro, Nagano, Japan
Maruta, Fumio, Nagano, Japan

 DETDESC:
   ... In formula (B), p is equal to 1 or 2. Examples of the compounds of
formula (B) include diethyl zinc, dimethyl zinc, methyl iodide mercury, methyl
iodide magnesium, ethyl bromide magnesium,  dimethyl mercury,  dimethyl
selenium, dimethyl magnesium, diethyl magnesium, diphenyl magnesium, dimethyl
zinc, di-n-propyl zinc, di-n-butyl zinc, diphenyl zinc, diphenyl cadmium,
diethyl mercury, di- ...


                           LEVEL 1 - 17 OF 37 PATENTS                            
                                   5,069,967

                                  Dec. 3, 1991

                           Magnetic recording medium

INVENTOR: Yokoyama, Kenji, Nagano, Japan
Nakayama, Masatoshi, Nagano, Japan
Shimozawa, Toru, Nagano, Japan
Ueda, Kunihiro, Nagano, Japan
Maruta, Fumio, Nagano, Japan

 DETDESC:
   ... In formula (B), p is equal to 1 or 2. Examples of the compounds of
formula (B) include diethyl zinc, dimethyl zinc, methyl iodide mercury, methyl
iodide magnesium, ethyl bromide magnesium,  dimethyl mercury,  dimethyl
selenium, dimethyl magnesium, diethyl magnesium, diphenyl magnesium, dimethyl
zinc, di-n-propyl zinc, di-n-butyl zinc, diphenyl zinc, diphenyl cadmium,
diethyl mercury, di- ...
                           LEVEL 1 - 18 OF 37 PATENTS                            
                                   5,034,483

                                 Jul. 23, 1991

           Process for preparing high density, broad molecular weight
                       distribution alpha-olefin polymers

INVENTOR: Miro, Nemesio D., North Brunswick, New Jersey
Nowlin, Thomas E., Somerset, New Jersey

 DETDESC:
   ... added to the synthesis mixture which is in excess or that deposited onto  the carrier, the excess must be removed, e.g., by decantation.

   The metals of Group IIB used herein are zinc, cadmium or mercury. Suitable
compounds of such metals are organic compoundsd thereof, e.g.,  dimethyl 
 mercury,  diethyl mercury, dimethyl cadmium, diethyl cadmium, organic zinc
compounds, e.g., zinc alkyl halides or dialkyl zinc compounds, preferably they
are organic zinc compounds, more preferably zinc alkyl halides or zinc ...


                           LEVEL 1 - 19 OF 37 PATENTS                            
                                   5,024,927

                                 Jun. 18, 1991

                          Information recording medium

INVENTOR: Yamada, Katsuyuki, Yokohama, Japan
Ide, Yukio, Mishima, Japan
Harigaya, Makoto, Hiratsuka, Japan
Iwasaki, Hiroko, Tokyo, Japan

 DETDESC:
   ... beryllium, organobismuth compounds such as trimethyl bismuth and triethyl bismuth, organocadmium compounds such as dimethyl cadmium and diethyl cadmium,
organogermanium compounds such as tetramethyl germanium and tetraethyl
germanium, organomercury compounds such as  dimethyl mercury  and diethyl
mercury, organoindium compounds such as trimethyl indium, triethyl indium,
triisobutyl indium and tributyl indium, organolithium compounds such as butyl
lithium, organomagnesium compounds such as dimethyl magnesium, organophosphorus  compounds such ...
                           LEVEL 1 - 20 OF 37 PATENTS                            
                                   5,010,033

                                 Apr. 23, 1991

             Process for producing compound semiconductor using an
                           amorphous nucleation site

INVENTOR: Tokunaga, Hiroyuki, Kawasaki, Japan
Yamagata, Kenji, Atsugi, Japan
Yonehara, Takao, Atsugi, Japan

 DETDESC:
   ... included dimethyl zinc, diethyl zinc (Zn(C2H5)2), dimethyl cadmium
(Cd(CH3)2), diethyl cadmium, dipropyl cadmium (Cd(C3H7)2), dibutyl cadmium
(Cd(C4H9)2),  dimethyl mercury  (Hg(CH3)2), diethyl mercury (Hg(C2H5)2), etc.,
and as the starting material (VI) hydrogen sulfide (H2S), selenium hydride,
dimethyl selenium, diethyl selenium (Se(C2H5)2), ...


                           LEVEL 1 - 21 OF 37 PATENTS                            
                                   4,950,621

                                 Aug. 21, 1990

          Method of growing crystalline layers by vapor phase epitaxy

INVENTOR: Irvine, Stuart J., Malvern, England
Mullin, John B., West Malvern, England
Giess, Jean, Malvern, England

 SUM:
   ... example passing the gas stream over liquid mercury heated to a required
temperature. The atmosphere of Hg may additionally or alternatively be provided  by a photolytically unstable mercury compound such as  dimethyl mercury  which
will readily decompose in the presence of electromagnetic, especially uv,
radiation. The partial pressure of the mercury atmosphere in the reaction zone
is preferably greater than 10< - 2 > atmosphere, most preferably greater than 2   ...

... increase the area of epitaxial growth. As an example, where x is < 1 and  the atmosphere of Hg is provided by a supply of Hg vapour, the additional alkyl  compound may be a mercury alkyl, especially  dimethyl mercury.  Where x = 1, a
mercury may still be used provided its concentration in the gas stream is
sufficiently low to prevent the Hg it liberates during photolysis from reacting  with tellurium. As a further ...

 DETDESC:
   ... for example Al from (CH3)3 Al; Ga from (CH3)3 Ga; As from (CH3)3 As; and  P from (CH3)3P.

   The bubbler 25 may contain a mercury alkyl such as  dimethyl mercury 
instead. In this case, the mercury alkyl is introduced into the vessel 16 in the same manner as the dopant.

   A supply of helium via a line 43 controlled by the controller 35 is provided  to ...

   ... being situated 4.5 cm from the bottom of the inside of the furnace. In
all Examples, cadmium telluride CdTe was used as the substrate 20, and the
content of the bubblers 6, 7 and 25 were dimethyl cadmium, diethyl telluride,
and  dimethyl mercury  respectively. The temperature of each bubbler was
maintained at 25o C. unelss otherwise stated. The bubblers were designed such
that the helium gas leaving each bubbler was substantially saturated with the
alkyl at the bubbler temperature. The mercury lamp 40 ...

   ... C., and the mercury bath 19o to 215o C.

   After 45 minutes of growth, an apitaxial CMT layer of 0.4 micron thickness
and 1.8 cm<2 > epitaxial surface area was found to have formed. The presence of   dimethyl mercury  in the vessel 16 was therefore shown to produce a significant increase in yield (i.e. epitaxial surface area).
EXAMPLE 5
Epitaxial Multi Layer Growth


                           LEVEL 1 - 22 OF 37 PATENTS                            
                                   4,919,304

                                 Apr. 24, 1990

                            Bubbler cylinder device

INVENTOR: Markowicz, Marion, Basking Ridge, New Jersey

 SUM:
   ... other objectives of the invention, there is provided a cylinder and dip
tube package suitable for containing electronic grade organometallic compounds
in liquid form such as, for example, diethyltelluride diethyl zinc,  dimethyl 
 mercury,  dimethyltelluride, and other group II, III, V and VI metal alkyls.
The package comprises a stainless steel block welded to a stainless steel
cylindrical container, and a dip tube, the block having ...




                           LEVEL 1 - 23 OF 37 PATENTS                            
                                   4,889,767

                                 Dec. 26, 1989

                           Magnetic recording medium

INVENTOR: Yokoyama, Kenji, Nagano, Japan
Nakayama, Masatoshi, Nagano, Japan
Shimozawa, Toru, Nagano, Japan
Ueda, Kunihiro, Nagano, Japan
Maruta, Fumio, Nagano, Japan

 DETDESC:
   ... In formula (B), p is equal to 1 or 2. Examples of the compounds of
formula (B) include diethyl zinc, dimethyl zinc, methyl iodide mercury, methyl
iodide magnesium, ethyl bromide magnesium,  dimethyl mercury,  dimethyl
selenium, dimethyl magnesium, diethyl magnesium, diphenyl magnesium, dimethyl
zinc, di-n-propyl zinc, di-n-butyl zinc, diphenyl zinc, diphenyl cadmium,
diethyl mercury, di- ...
                           LEVEL 1 - 24 OF 37 PATENTS                            
                                   4,880,687

                                 Nov. 14, 1989

                           Magnetic recording medium

INVENTOR: Yokoyama, Kenji, Nagano, Japan
Nakayama, Masatoshi, Nagano, Japan
Shimozawa, Toru, Nagano, Japan
Ueda, Kunihiro, Nagano, Japan
Maruta, Fumio, Nagano, Japan

 DETDESC:
   ... In formula (B), p is equal to 1 or 2. Examples of the compounds of
formula (B) include diethyl zinc, dimethyl zinc, methyl iodide mercury, methyl
iodide magnesium, ethyl bromide magnesium,  dimethyl mercury,  dimethyl
selenium, dimethyl magnesium, diethyl magnesium, diphenyl magnesium, dimethyl
zinc, di-n-propyl zinc, di-n-butyl zinc, diphenyl zinc, diphenyl cadmium,
diethyl mercury, di- ...


                           LEVEL 1 - 25 OF 37 PATENTS                            
                                   4,866,021

                                 Sep. 12, 1989

             Catalyst composition for preparing high density, broad
              molecular weight distribution alpha-olefin polymers

INVENTOR: Miro, Nemesio D., North Brunswick, New Jersey
Nowlin, Thomas E., Somerset, New Jersey

 DETDESC:
   ... added to the synthesis mixture which is in excess of that deposited onto  the carrier, the excess must be removed, e.g., by decantation.

   The metals of Group IIB used herein are zinc, cadmium or mercury. Suitable
compounds of such metals are organic compounds thereof, e.g.,  dimethyl 
 mercury,  diethyl mercury, dimethyl cadmium, diethyl cadmium, organic zinc
compounds, e.g., zinc alkyl halides or dialkyl zinc compounds, preferably they
are organic zinc compounds, more preferably zinc alkyl halides or zinc ...


                           LEVEL 1 - 26 OF 37 PATENTS                            
                                   4,859,625

                                 Aug. 22, 1989

          Method for epitaxial growth of compound semiconductor using
                       MOCVD with molecular layer epitaxy

INVENTOR: Matsumoto, Fumio, Miyagi, Japan

 DETDESC:
   ... DMTe) for alkyl indium, alkyl gallium and AsH3

   Further, a single crystalline thin film of Hg x Cd 1-x Te may also be grown
by using gases of  dimethyl mercury  (DMHg), dimethyl cadmium (DMCd) and
dimethyl tellurium (DMTe).

   FIG. 7A is an embodiment according to the present invention in which a
manufacturing process for a superlattice structure is schematically shown. In
the superlattice ...


                           LEVEL 1 - 27 OF 37 PATENTS                            
                                   4,844,736

                                  Jul. 4, 1989

          Method for the preparation of finely divided metal particles

INVENTOR: Shimo, Nobuo, Ichihara, Japan
Yoshihara, Keitaro, Okazaki, Japan
Nakashima, Nobuaki, Suita, Japan

 SUM:
   ... metal carbonyls are preferred in respect of the small bond energy.

   Exemplary of the metallic compounds suitable as the starting material of the  inventive method are tetramethyl lead, tetraethyl lead, trimethyl bismuth,
trimethyl thallium,  dimethyl mercury,  dimethyl zinc, diethyl zinc, dimethyl
cadmium, diethyl cadmium and the like.

   The concentration of the metallic compound in the vapor phase should be at
least 10<15 > molecules per cm<3 > or, preferably, at least ...

                           LEVEL 1 - 28 OF 37 PATENTS                            
                                   4,826,602

                                  May 2, 1989

              Reduction of trace elements to the elemental form by
                                 microorganisms

INVENTOR: Revis, Nathaniel W., Oak Ridge, Tennessee
Benson, Suzanne B., Kingston, Tennessee
Osborne, Tanya R., Oak Ridge, Tennessee

 SUM:
   ... can also be used to treat organometallic compounds, more particularly,
compounds in which the metal-carbon bond is covalent. Exemplary of
organometallic compounds which can be treated by the process of this invention
are methyl mercury,  dimethyl mercury,  diphenyl lead, dipropyl cadmium,
tetraethyl lead and triethyl tin.

   "Elemental metal" means the metal in its zerovalent condition.

   Waste waters are preferably contacted with the selected Pseudomonas culture
under aerobic conditions. The ...
                           LEVEL 1 - 29 OF 37 PATENTS                            
                                   4,767,494

                                 Aug. 30, 1988

                 Preparation process of compound semiconductor

INVENTOR: Kobayashi, Naoki, Iruma, Japan
Makimoto, Toshiki, Tokorozawa, Japan
Horikoshi, Yoshiji, Akishima, Japan

 DETDESC:
   ... interruption thereof were repeated at a time interval of one second.
After 3600 cycles, the growth was 1.02 mu m in terms of thickness and one ZnSe
molecular layer was formed during each cycle.

   When  dimethyl mercury  (CH3)2Hg was used as an organometallic compound while H2Se was used as a hydride, a thin HgSe film was grown over the (100) surface of a HgSe substrate in a ...

... time interval of one second. After 3600 cycles, the growth in terms of
thickness was 1.02 mu m and a single ZnSe molecular layer was formed during each cycle.

   By using  dimethyl mercury  (CH3)2Hg as an organometallic compound and H2Se
as a hydride, an HgSe thin film was grown over the (100) surface of an HgSe
substrate under the same conditions as those in the growth of the ZnSe ...



                           LEVEL 1 - 30 OF 37 PATENTS                            
                                   4,762,576

                                  Aug. 9, 1988

                          Close space epitaxy process

INVENTOR: Wilson, Herbert L., Woodbridge, Virginia
Guiterrez, William A., Woodbridge, Virginia

 DETDESC:
   ... reactive gases before, during, or after the epitaxial growth to provide
in situ formation of multilayers, passivation, and device structure. Some of the gases used may be hydrogen selenide, diethyl telluride, dimethyl cadmium,
 dimethyl mercury,  other organic metallics, hydrides, silane, germane, etc.
Dopants may also be introduced this way. These gases could serve to modify the
electrical and optical properties of the epitaxially grown layers.

   The embodiment as shown by ...

                           LEVEL 1 - 31 OF 37 PATENTS                            
                                   4,728,427

                                  Mar. 1, 1988

              Reduction of trace elements to the elemental form by
                                 microorganisms

INVENTOR: Revis, Nathaniel W., 1060 W. Outer Dr., Oak Ridge, Tennessee 37830
Benson, Suzanne B., 73 Paint Rock Ferry Rd., Apt. 12, Kingston, Tennessee 37763  Osborne, Tanya R., 108 Lynwood La., Oak Ridge, Tennessee 37830
Hadden, Charles T., 165 Waddell Cir., Oak Ridge, Tennessee 37830

 SUM:
   ... can also be used to treat organometallic compounds, more particularly,
compounds in which the metal-carbon bond is covalent. Exemplary of
organometallic compounds which can be treated by the process of this invention
are methyl mercury,  dimethyl mercury,  diphenyl lead, dipropyl cadmium,
tetraethyl lead and triethyl tin.

   "Elemental metal" means the metal in its zerovalent condition.

Waste waters are preferably contacted with the selected Pseudomonas culture
under aerobic conditions. The ...


                           LEVEL 1 - 32 OF 37 PATENTS                            
                                   3,933,431

                                 Jan. 20, 1976

             Method and apparatus for sampling atmospheric mercury

INVENTOR: Trujillo, Patricio E., Santa Fe, New Mexico
Campbell, Evan E., Los Alamos, New Mexico
Eutsler, Bernard C., Los Alamos, New Mexico

 DETDESC:
   ... specific surface areas ranging from 2.80 to 5.24 m<2> /g, depending on
the measuring technique.

   The purpose of adsorber material 3 is to selectively and quantitatively
adsorb organic mercurial vapors, e.g., those of methyl mercury chloride,
 dimethyl mercury,  ethyl mercury chloride, diethyl mercury, and diphenyl
mercury, while permitting the free passage of metallic mercury vapor
therethrough. Adsorber material 3 may be such as to temporarily detrain mercury  vapor from the ...
                           LEVEL 1 - 33 OF 37 PATENTS                            
                                   3,923,597

                                  Dec. 2, 1975

               Mercury concentration by the use of microorganisms

INVENTOR: Chakrabarty, Ananda M., Latham, New York
Friello, Denise A., Schenectady, New York
Mylroie, Joan R., Scotia, New York

 SUM:
   ... States is severely restricted.

   Mercury poisoning results when mercury salts from industrial effluents
deposit in river or lake sediments and are then acted upon by anaerobic
bacteria. These bacteria convert mercury salts to monoethyl and  dimethyl 
 mercury.  These methylated mercury derivatives, particularly the monomethyl
mercury become stored in the bodies of fish and, later, consumption of the flesh of such fish leads to acute mercury poisoning. Chemical methods at selectively
binding mercury from industrial ...

                           LEVEL 1 - 34 OF 37 PATENTS                            
                                   3,802,910

                                  Apr. 9, 1974

               RECOVERY OF MERCURY FROM MERCUROUS BEARING LIQUIDS

INVENTOR: Gerow, Raymond F., Berkeley Hts., New Jersey
Soule, Stanley B., Springfield, New Jersey

 SUM:
   ... for the high levels of mercury per ounce in fish. The methylated
inorganic mercury is capable of concentration in a biological system and hence
the great danger. The mercury itself or inorganic mercury is biologically
converted to  dimethyl mercury  which is the form predominantly found in the
fish. We now know that inorganic mercury can be alkylated to methyl mercury in
natural systems, and this points up the present dimensions of the mercury
pollution problem. Broken ...




                           LEVEL 1 - 35 OF 37 PATENTS                            
                                   3,790,370

                                  Feb. 5, 1974

              REMOVAL AND RECOVERY OF METALS FROM POLLUTED WATERS

INVENTOR: Lalancette, Jean-Marc, Sherbrooke, Quebec, Canada

 DETDESC:
   ... smoke and the flue gases formed are submitted to pyrolytic temperatures
in the upper portion of the furnace 28, for example 500o to 700o C. before
leaving the furnace. The pyrolytic temperature will avoid the formation of
 dimethyl mercury  or other volatile mercury derivatives which are a most toxic  gas. Also with the pyrolytic temperatures there is avoided the production of tar or other condensable gas while favouring the formation of water and mercury
vapors and sulfur dioxide.

   The gases are then ...

                           LEVEL 1 - 36 OF 37 PATENTS                            
                                   3,762,938

                                  Oct. 2, 1973

                         DEPOSITION OF THIN METAL FILMS

INVENTOR: Ridenour, Richard E., Midland, Michigan
Groves, Kenneth O., Midland, Michigan

 SUM:
   ... hydride and react with aluminum hydride to form a hydride including the
heavy metal, are employable in the claimed process. More specifically, compounds with a heavy metal to carbon bond such as cobalt octacarbonyl,
 dimethyl-mercury,  cupric cyanide, and diphenylmercury; a metal to oxygen bond  such as cobalt (III) acetate, tetraethoxy titanium, tetra(diethylhydroxylamino)  tin, tetraphenoxy tin, trimethylplatinum acetylacetonate, and titanium
oxytrichloride; a metal to nitrogen ...




                           LEVEL 1 - 37 OF 37 PATENTS                            
                                   3,697,535

                                 Oct. 10, 1972

                     4,5-DIHYDROIMIDAZOLINE-3-OXIDE-1-OXYL

INVENTOR: Leute, Richard K., Mountain View, California
Ullman, Edwin F., Atherton, California

 DETDESC:
   ... 3.96; N, 6.46. Found: C, 36.43; H, 4.09; N, 6.43.

   Other suitable dialkyl and diaryl compounds which could be utilized in the
foregoing example instead of diphenyl mercury are as follows:

    dimethyl mercury 

   dibutyl mercury

   dicyclohexyl mercury

  dibenzyl mercury

   dinaphthyl mercury

   dicarbethoxyphenyl mercury

   bis-(3-hexenyl) mercury

   bis-(methoxybenzyl) mercury

   bis-(chloroethylphenyl) mercury

   bis-(dimethylamino-ethyl) mercury